Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon

Keyphrases

• Microelectronics 100%
• III-V Semiconductors 100%
• New Platform 100%
• Tin-based 100%
• SiGe 50%
• Direct Band Gap 50%
• Thermal Stability 50%
• III-V 50%
• Band Gap 50%
• Optical Properties 50%
• High Linearity 50%
• Monolithic Integration 50%
• Virtual Substrate 50%
• Electronic Properties 50%
• Si Substrate 50%
• Crystallinity 50%
• Scaling Behavior 50%
• Optical Transitions 50%
• Compositional Dependence 50%
• II-VI Semiconductors 50%
• Strain State 50%
• Bowing Parameter 50%
• Ternaries 50%
• Strain Properties 50%
• Adjustable Band Gap 50%

Material Science

• Silicon 100%
• Film 100%
• Chemical Vapor Deposition 100%
• Tin 100%
• Thermal Stability 100%
• Electronic Property 100%
• II-VI Semiconductor 100%