TRANSIENT EFFECTS IN SUBMICRON DEVICES - LOAD LINE DEPENDENCE.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Authors compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.

Original language	English (US)
Title of host publication	Advances in Chemistry Series
Place of Publication	New York, NY
Publisher	IEEE
Pages	394-397
Number of pages	4
State	Published - 1979
Externally published	Yes
Event	Int Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA Duration: Dec 3 1979 → Dec 5 1979

Other	Int Electron Devices Meet, 25th, Tech Dig
City	Washington, DC, USA
Period	12/3/79 → 12/5/79

@inbook{75838af1e036428eb6b4426653d87e89,

title = "TRANSIENT EFFECTS IN SUBMICRON DEVICES - LOAD LINE DEPENDENCE.",

abstract = "Authors compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.",

author = "Grubin, \{H. L.\} and Barker, \{J. R.\}",

year = "1979",

language = "English (US)",

pages = "394--397",

booktitle = "Advances in Chemistry Series",

publisher = "IEEE",

note = "Int Electron Devices Meet, 25th, Tech Dig ; Conference date: 03-12-1979 Through 05-12-1979",

}

TY - CHAP

T1 - TRANSIENT EFFECTS IN SUBMICRON DEVICES - LOAD LINE DEPENDENCE.

AU - Grubin, H. L.

AU - Barker, J. R.

PY - 1979

Y1 - 1979

N2 - Authors compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.

AB - Authors compute the transient response of gallium arsenide submicron two terminal devices and examine their load line dependence.

UR - https://www.scopus.com/pages/publications/0018684062

UR - https://www.scopus.com/pages/publications/0018684062#tab=citedBy

M3 - Chapter

SP - 394

EP - 397

BT - Advances in Chemistry Series

PB - IEEE

CY - New York, NY

T2 - Int Electron Devices Meet, 25th, Tech Dig

Y2 - 3 December 1979 through 5 December 1979

ER -