@inproceedings{d8a829b8abfd418fbedc0eff3629c24b,
title = "TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON.",
abstract = "We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As** plus implanted Si.",
author = "Pennycook, \{S. J.\} and J. Marayan and Culbertson, \{R. J.\}",
year = "1985",
language = "English (US)",
isbn = "0931837014",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "151--156",
booktitle = "Materials Research Society Symposia Proceedings",
}