Transient Switching Behavior of the Resonant-Tunneling Diode

N. C. Kluksdahl; A. M. Kriman; Christian Ringhofer

doi:10.1109/55.6944

Transient Switching Behavior of the Resonant-Tunneling Diode

N. C. Kluksdahl
, A. M. Kriman
, Christian Ringhofer

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.

Original language	English (US)
Pages (from-to)	457-459
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1109/55.6944
State	Published - Sep 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.6944

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title = "Transient Switching Behavior of the Resonant-Tunneling Diode",

abstract = "The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.",

author = "Kluksdahl, \{N. C.\} and Kriman, \{A. M.\} and Christian Ringhofer",

note = "Funding Information: Manuscript received April 5, 1988; revised June 28, 1988. This work was supportcd in part by the Office of Naval Research. C. Ringhofer was supported hy the Air Force Office of Scientific Research. N. C. Klukadahl. A. M. Kriman, and D. K. Ferry are with the Center for Solid State Electronics Research, Arizona State University. Tempe, AZ 85287. C. Kinghoter is with the Department of Mathematics, Arizona State Univcr\textbackslash{}it). Tempe, AZ 85287. IEEt. Log Number 8823107.",

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AU - Kluksdahl, N. C.

AU - Kriman, A. M.

AU - Ringhofer, Christian

N1 - Funding Information: Manuscript received April 5, 1988; revised June 28, 1988. This work was supportcd in part by the Office of Naval Research. C. Ringhofer was supported hy the Air Force Office of Scientific Research. N. C. Klukadahl. A. M. Kriman, and D. K. Ferry are with the Center for Solid State Electronics Research, Arizona State University. Tempe, AZ 85287. C. Kinghoter is with the Department of Mathematics, Arizona State Univcr\it). Tempe, AZ 85287. IEEt. Log Number 8823107.

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AB - The transient behavior of a resonant-tunneling diode (RTD) arising from switching the applied bias from the peak to the valley of the I- V curve requires a fully quantum mechanical model with a self-consistent solution of the potential. Ballistic behavior and plasma oscillations of the electrons contribute to large oscillations in the transient current. The ballistic inertia of the electrons provides a large inductive reactance, which couples to the capacitive charging and discharging of the quantum well.

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JO - IEEE Electron Device Letters

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Transient Switching Behavior of the Resonant-Tunneling Diode

Abstract

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