Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao; S. Chowdhury; M. A. Hollis; D. Jena; N. M. Johnson; K. A. Jones; R. J. Kaplar; S. Rajan; C. G. Van de Walle; E. Bellotti; C. L. Chua; R. Collazo; M. E. Coltrin; J. A. Cooper; K. R. Evans; S. Graham; T. A. Grotjohn; E. R. Heller; M. Higashiwaki; M. S. Islam; P. W. Juodawlkis; M. A. Khan; A. D. Koehler; J. H. Leach; U. K. Mishra; Robert Nemanich; R. C.N. Pilawa-Podgurski; J. B. Shealy; Z. Sitar; M. J. Tadjer; A. F. Witulski; M. Wraback; J. A. Simmons

doi:10.1002/aelm.201600501

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. IslamP. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, Robert Nemanich, R. C.N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, J. A. Simmons

Research output: Contribution to journal › Review article › peer-review

1015 Scopus citations

Abstract

Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga₂O₃, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

Original language	English (US)
Article number	1600501
Journal	Advanced Electronic Materials
Volume	4
Issue number	1
DOIs	https://doi.org/10.1002/aelm.201600501
State	Published - Jan 2018

Keywords

UV-C
aluminum nitride
boron nitride
diamond
extreme environments
gallium oxide
power electronics
ultrawide bandgaps

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1002/aelm.201600501

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Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., ... Simmons, J. A. (2018). Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges. Advanced Electronic Materials, 4(1), Article 1600501. https://doi.org/10.1002/aelm.201600501

Tsao, JY, Chowdhury, S, Hollis, MA, Jena, D, Johnson, NM, Jones, KA, Kaplar, RJ, Rajan, S, Van de Walle, CG, Bellotti, E, Chua, CL, Collazo, R, Coltrin, ME, Cooper, JA, Evans, KR, Graham, S, Grotjohn, TA, Heller, ER, Higashiwaki, M, Islam, MS, Juodawlkis, PW, Khan, MA, Koehler, AD, Leach, JH, Mishra, UK, Nemanich, R, Pilawa-Podgurski, RCN, Shealy, JB, Sitar, Z, Tadjer, MJ, Witulski, AF, Wraback, M & Simmons, JA 2018, 'Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges', Advanced Electronic Materials, vol. 4, no. 1, 1600501. https://doi.org/10.1002/aelm.201600501

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title = "Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges",

abstract = "Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.",

keywords = "UV-C, aluminum nitride, boron nitride, diamond, extreme environments, gallium oxide, power electronics, ultrawide bandgaps",

author = "Tsao, {J. Y.} and S. Chowdhury and Hollis, {M. A.} and D. Jena and Johnson, {N. M.} and Jones, {K. A.} and Kaplar, {R. J.} and S. Rajan and {Van de Walle}, {C. G.} and E. Bellotti and Chua, {C. L.} and R. Collazo and Coltrin, {M. E.} and Cooper, {J. A.} and Evans, {K. R.} and S. Graham and Grotjohn, {T. A.} and Heller, {E. R.} and M. Higashiwaki and Islam, {M. S.} and Juodawlkis, {P. W.} and Khan, {M. A.} and Koehler, {A. D.} and Leach, {J. H.} and Mishra, {U. K.} and Robert Nemanich and Pilawa-Podgurski, {R. C.N.} and Shealy, {J. B.} and Z. Sitar and Tadjer, {M. J.} and Witulski, {A. F.} and M. Wraback and Simmons, {J. A.}",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = jan,

doi = "10.1002/aelm.201600501",

language = "English (US)",

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T1 - Ultrawide-Bandgap Semiconductors

T2 - Research Opportunities and Challenges

AU - Tsao, J. Y.

AU - Chowdhury, S.

AU - Hollis, M. A.

AU - Jena, D.

AU - Johnson, N. M.

AU - Jones, K. A.

AU - Kaplar, R. J.

AU - Rajan, S.

AU - Van de Walle, C. G.

AU - Bellotti, E.

AU - Chua, C. L.

AU - Collazo, R.

AU - Coltrin, M. E.

AU - Cooper, J. A.

AU - Evans, K. R.

AU - Graham, S.

AU - Grotjohn, T. A.

AU - Heller, E. R.

AU - Higashiwaki, M.

AU - Islam, M. S.

AU - Juodawlkis, P. W.

AU - Khan, M. A.

AU - Koehler, A. D.

AU - Leach, J. H.

AU - Mishra, U. K.

AU - Nemanich, Robert

AU - Pilawa-Podgurski, R. C.N.

AU - Shealy, J. B.

AU - Sitar, Z.

AU - Tadjer, M. J.

AU - Witulski, A. F.

AU - Wraback, M.

AU - Simmons, J. A.

PY - 2018/1

Y1 - 2018/1

N2 - Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

AB - Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

KW - UV-C

KW - aluminum nitride

KW - boron nitride

KW - diamond

KW - extreme environments

KW - gallium oxide

KW - power electronics

KW - ultrawide bandgaps

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U2 - 10.1002/aelm.201600501

DO - 10.1002/aelm.201600501

M3 - Review article

SN - 2199-160X

VL - 4

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 1

M1 - 1600501

ER -

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

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Keywords

ASJC Scopus subject areas

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